Theoretically it should be feasible to fab 350 nm without double-patterning by optimizing a simple immersion DLP/DMD i-line stepper.
I think ArF immersion with double-patterning should be able to do maskless 90 nm.
Theoretically it should be feasible to fab 350 nm without double-patterning by optimizing a simple immersion DLP/DMD i-line stepper.
I think ArF immersion with double-patterning should be able to do maskless 90 nm.